Academic staff

Professor Tao Wang

Director of the Centre for GaN Materials and Devices

Research interests:

  • MOCVD growth of III-nitride materials and devices
  • Nanofabrication of III-nitride optoelectronics with ultrahigh efficiency
  • III-nitride based solid-state lighting
  • Application of plasmonics in III-nitride optoelectronics
  • Application of photonics crystal in III-nitride optoelectronics
  • III-nitride Solar Cell
  • III-nitride optoelectronics for hydrogen generation

Dr Rick Smith

Lecturer

Research Interests

Focused on GaN related materials and devices, particularly optoelectronics.

  • Hybrid organic/inorganic optoelectronics
  • Non-radiative energy transfer processes in hybrid GaN/organic interfaces
  • High efficiency semi-polar GaN based materials, LEDs and LD structures
  • Optical characterization techniques of III-nitride materials and devices

Visiting academics

Professor Pallab Bhattacharya, Dr Jayanta Sarma

Dr Yu Lu

Visiting academic

Anhui University of Technology

Research interests:

  • III-nitride based LED and LD
  • HVPE growth of GaN substrate

Dr Qiang Wang

Visiting academic

Qilu University of Technology

Research interests:

  • Nano/micro fabrication and characterisation of III-nitride based LED

Research staff

Dr Jie Bai

Research Associate

Ph.D, University of Tokushima, Japan

Research Interests

  • Nanotechnology including fabrication of templates for semi-/non-polar GaN overgrowth;
  • III-nitride-based high-brightness nanorod array LEDs, UV-LEDs, solar cells with photonic nanostructures and Laser Diodes on sapphire substrates;
  • High-resolution transmission electron microscopy and energy x-ray microanalysis study of nitride-related semiconductor materials;
  • Structural and optical investigation of InGaN/GaN and GaN/AlGaN multiple quantum well structures.

Dr Yuefei Cai

Research Associate

Ph.D., Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, January 2018
M.Phil., Physical Electronics, Harbin Institute of Technology, China, July 2013
B.Sc., Electronic Science and Technology, Harbin Institute of Tehnology, China, July 2011

Research Interests:

  • Monolithic integration of III-nitride electronic and optical devices;
  • Design, fabrication and characterization of III-nitride devices (GaN HEMT, LED, Photodiode, etc.)

Dr Suneal Ghataora

Research Associate

PhD in Electronic and Electrical Engineering, University of Sheffield, UK, 2019

B.Eng. Electronic and Electrical Engineering, The University of Sheffield

Research Interests

  • Fabrication and characterisation of hybrid organic and inorganic III-Nitride semiconductor light emitting opto-electronic devices.

Dr Kai Huang

Research Associate

PhD in Microelectronics and Solid State Electronics, Nanjing University, China, 2007

BSc in Microelectronics, Nanjing University, China, 2002

Research Interests:

  • AlGaN based deep UV optoelectronics
  • Plasmonics in III-nitride optoelectronics

Dr Sheng Jiang

Research Associate

PhD in Electronic and Electrical Engineering, University of Sheffield, UK, 2018

MSc in Electronic and Electrical Engineering, University of Sheffield, UK, 2013

BEng in Automatic Control and Electrical Systems Engineering, East China University of Science and Technology (ECUST), Shanghai, China, 2011

Research Interests:

  • GaN based high-voltage high-frequency transistors for power switching applications
  • GaN based integrated circuits and systems

Mr Nicolas Poyiatzis

PhD in Electronic and Electrical Engineering, University of Sheffield, 2020
MEng Electrical Engineering, The University of Sheffield

Research interests:

  • Fabrication and characterization of semi-polar III-Nitride based opto-electronics

PhD students

Mr Volkan Esendag

MEng Electronics and Nanotechnology, University of Leeds

Research interests

  • Monolithic Integration of Group III-Nitrides on a Si Substrate

Mr Peng Feng

BSc, Applied Physics, Qingdao University of Technology
MSc, Semiconductor Photonics and Electronics, University of Sheffield

Research interests:

  • Growth and characterisation of monolithically integrated III-nitride micro-LED arrays.

Mr Peter Fletcher

Research interests

  • Growth and growth related material characteristics, optical investigation on non-polar and semi-polar multi quantum wells
  • Optical investigation of non-polar and semi-polar nano-membranes using conductive etching approach

Mr Jack Haggar

Research summary:

  • Fabrication and characterisation of III-Nitride photonics and electronics for visible light wireless communications.

Mr Zhiheng Lin

MSc, Semiconductor Photonics and Electronics, University of Sheffield

Research Interests:

  • Monolithically integrated III-nitride micro-LEDs on silicon for micro-displays

Mr Shuoheng Shen

B.Sc, Optical Information Science and Technology, University of Shanghai for Science and Technology
MSc, Semiconductor Photonics and Engineering, University of Sheffield

Research Interests

  • Growth of Non-polar and Semi-polar III-nitride based materials on silicon substrates by MOCVD.

Mr Ye Tian

B.Sc, Electrical Engineering, University of Liverpool
MSc, Semiconductor Photonics and Engineering, University of Sheffield

Research Interests:

  • The growth of nitrogen-polar III-nitride based materials by MOCVD.
  • Investigation of nitrogen-polar nano-membranes using conductive etching approach.

Mr Ce Xu

BSc, Electronic and Electrical Engineering , University of Greenwich
MSc, Electronic and Electrical Engineering, University of Sheffield

Research interests

  • Growth and characterisation of monolithically integrated III-nitride micro-LED

Mr Xuanming Zhao

2014-2015 Graduate from University of Sheffield (Msc)

Research Interests

  • Growth of Semi-polar III-nitride based materials on silicon substrates by MOCVD and Template Fabrication.

Mr Chenqi Zhu

B.Sc, Electronic and Electrical Engineering, Shaanxi Normal University
MSc, Electronic and Electrical Engineering, University of Sheffield

Research interests:

  • Monolithic Integration and growth of Group 3-Nitrides on Si Substrate

Technical staff

Stephen Atkin

Senior Technician

MIScT

Centre administrator

Katherine Greenacre