Academic staff

Professor Tao Wang

Chair of Advanced Opto-Electronics

    Dr Rick Smith

    Lecturer

    B.Sc. Physics, University of Sheffield
    Ph.D.Electronic and Electrical Engineering, University of Sheffield

    Research Interests
    Fabrication and characterization of novel hybrid light emitting structures based on III-nitride materials and organic semiconductors
    Study of recombination dynamics in III-nitride based materials and devices
    Optical characterization of non-polar and semi-polar nitride materials

    Recent Publications
    “Coherent nanocavity effect in InGaN/GaN nanodisk arrays” T Kim, B Liu, R Smith, M Athanasiou Y P Gong and T Wang Appl. Phys. Lett. 104, 161108 (2014)
    “Great emission enhancement and excitonic recombination dynamics of InGaN/GaN nanorod structures” B Liu, R Smith, J Bai, Y P Gong and T Wang Appl. Phys. Lett. 103, 101108 (2013)
    “Hybrid III-nitride/organic semiconductor nanostructure with high efficiency non-radiative energy transfer for white light emitter” R Smith, B Liu, J Bai and T Wang Nano Lett. 13, 3042 (2013)
    “Simplifying an approach to the fabrication of two-dimensional InGaN/GaN photonic crystal structure” M Athanasiou, T K Kim, B Liu, R Smith and T Wang Appl. Phys. Lett. 102, 191108 (2013)

      Research staff

        Dr Jie Bai

        Research Associate

        Ph.D, University of Tokushima, Japan

        Research Interests
        Nanotechnology including fabrication of templates for semi-/non-polar GaN overgrowth;
        III-nitride-based high-brightness nanorod array LEDs, UV-LEDs, solar cells with photonic nanostructures and Laser Diodes on sapphire substrates;
        High-resolution transmission electron microscopy and energy x-ray microanalysis study of nitride-related semiconductor materials;
        Structural and optical investigation of InGaN/GaN and GaN/AlGaN multiple quantum well structures.

        Recent Publications
        She has published more than 60 journal papers and 1 invited review paper. Her publications have received over 800 citations and ranked with a high-index of 18 (ISI web of Knowledge).

            Dr Yaonan Hou

            Research Associate

            Ph.D, Institute of Physics, Chinese Academy of Sciences

            Research Interests
            Low dimensional surface plasmon light sources based on III-nitride semiconductors
            Fabrication and characterization of III-nitride nanostructures
            Optoelectronic devices based on III-nitride semiconductors, specifically LDs and LEDs
            Growth of III-nitride materials on Si substrate

            Recent Publications
            Y. Hou, P. Renwick, B. Liu, J. Bai, and T. Wang, “Room temperature plasmonic lasing in a continuous wave operation mode from an InGaN/GaN single nanorod with a low threshold”. Scientific Reports 4, 5014. (2014).

                Dr Yipin Gong

                Research Associate

                B.Eng, Electronic and Electrical Engineering, University of Sheffield
                Ph.D. Electronic and Electrical Engineering, University of Sheffield

                Research Interests
                Growth of c-plane III-nitride based materials and LED-structure by MOCVD
                Growth of non-polar and semi-polar III-nitride based materials by MOCVD
                Study of optical properties of AlGaN

                Recent Publications
                Y. P. Gong, K. Xing, and T. Wang, Appl. Phys. Lett, 99, 171912 (2011)
                K. Xing, Y. P. Gong, J. Bai, and T. Wang, Appl. Phys. Lett, 99, 181907 (2011)
                Q. Wang, J. Bai, Y. P. Gong and T. Wang, J. Phys. D: Appl. Phys., 44, 395102 (2011)
                Y. P. Gong, K. Xing, and T. Wang, Phys. Status Solidi, 8, 2056 (2011)
                Q. Wang, Y. P. Gong, J. F. Zhang, J. Bai, F. Ranalli, and T. Wang, Appl. Phys. Lett., 95, 161904 (2009)

                    Dr Duc Dinh

                    Research Associate

                    B.Eng, Electronics and Telecommunications Engineering, Hanoi University of Technology, Vietnam
                    MSc, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, South Korea
                    PhD, Institute of Solid State Physics, Technical University of Berlin, Germany

                    Research Interests:
                    Growth of III-Nitride semiconductors and LED structures using MOCVD Optical characterization of nitride materials

                        Dr Modestos Athanasiou

                        Research Associate

                        B.Eng, Electronic and Electrical Engineering, University of Sheffield.

                        Research Interests
                        Fabrication and characterisation of nanostructure devices using nano-sphere lithography technique, for high-efficiency LEDs and LD devices.

                        Recent Publications
                        M.Athanasiou,T.K.Kim,B.Liu,R.Smith and T.Wang, ’Fabrication of two-dimensional InGaN/GaN photonic crystal structure using a modified nanosphere lithography technique’, Appl. Phys. Lett. 102, 191108 (2013).
                        T. Kim, B. Liu, R. Smith, M. Athanasiou, Y. Gong and T. Wang,’ Coherent nanocavity structures for enhancement in internal quantum efficiency of III-nitride multiple quantum wells’, Appl. Phys. Lett. 104, 161108 (2014).
                        J. Bai, C. C. Yang, M. Athanasiou and T. Wang , ‘Efficiency enhancement of InGaN/GaN solar cells with nanostructures’, Appl. Phys. Lett. 104, 051129 (2014).

                          PhD students

                            Xiang Yu

                            PhD Student

                            B.Eng, Electronic and Electrical Engineering, University of Sheffield

                            Research Interests
                            Growth of semi-polar III-nitride materials by MOCVD

                                Kun Xing

                                PhD Student

                                B.Eng, Electronic and Electrical Engineering, University of Sheffield

                                Research Interests
                                Growth of c-plane, non-polar and semi-polar III-nitride based materials by MOCVD
                                Overgrowth of a-plane GaN on non-polar nanorod templates by MOCVD
                                Optical properties of a-plane InGaN/GaN quantum well structures grown on the overgrown a-plane GaN, including the study of its relevant LED device structure and stimulated emission

                                Recent Publications
                                K. Xing, Y. P. Gong, J. Bai, and T. Wang, Appl. Phys. Lett, 99, 181907 (2011)
                                Y. P. Gong, K. Xing, and T. Wang, Appl. Phys. Lett, 99, 171912 (2011)
                                Y. P. Gong, K. Xing, and T. Wang, Ph

                                    Benbo Xu

                                    PhD Student

                                    Bachelor of Science, Guangdong University of Technology, China
                                    MSc in Semiconductor Photonics and Electronics, University of Sheffield

                                    Research Interests
                                    Growth of III-nitride materials on Si substrate by MOCVD
                                    strain and mobility study of semi-polar overgrown GaN
                                    Growth of high quality semi-polar GaN

                                        Fernando Guzmann

                                        PhD Student

                                        Bachelor of Electronic and Communications Engineering at Tecnológico de Monterrey, CCM
                                        MsC Advanced Technology at IPN

                                        Research Interests
                                        Optoelectronic device fabrication
                                        III-nitride LEDs
                                        Photonic crystals

                                            Yun Zhang

                                            PhD Student

                                            B.Sc, M.Sc. Nanjing University

                                            Research Interests
                                            Optical properties of non-polar and semipolar III-nitride quantum structures.

                                                Suneal Ghataora

                                                PhD Student

                                                B.Eng. Electronic and Electrical Engineering, The University of Sheffield

                                                Research Interests
                                                Fabrication and characterisation of hybrid organic and inorganic III-Nitride semiconductor light emitting opto-electronic devices.

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