Academic staff

Professor Tao Wang

Chair of Advanced Opto-Electronics

    Dr Rick Smith

    Lecturer

    B.Sc. Physics, University of Sheffield
    Ph.D.Electronic and Electrical Engineering, University of Sheffield

    Research Interests
    Fabrication and characterization of novel hybrid light emitting structures based on III-nitride materials and organic semiconductors
    Study of recombination dynamics in III-nitride based materials and devices
    Optical characterization of non-polar and semi-polar nitride materials

    Recent Publications
    “Coherent nanocavity effect in InGaN/GaN nanodisk arrays” T Kim, B Liu, R Smith, M Athanasiou Y P Gong and T Wang Appl. Phys. Lett. 104, 161108 (2014)
    “Great emission enhancement and excitonic recombination dynamics of InGaN/GaN nanorod structures” B Liu, R Smith, J Bai, Y P Gong and T Wang Appl. Phys. Lett. 103, 101108 (2013)
    “Hybrid III-nitride/organic semiconductor nanostructure with high efficiency non-radiative energy transfer for white light emitter” R Smith, B Liu, J Bai and T Wang Nano Lett. 13, 3042 (2013)
    “Simplifying an approach to the fabrication of two-dimensional InGaN/GaN photonic crystal structure” M Athanasiou, T K Kim, B Liu, R Smith and T Wang Appl. Phys. Lett. 102, 191108 (2013)

      Research staff

        Dr Yipin Gong

        Research Associate

        B.Eng, Electronic and Electrical Engineering, University of Sheffield
        Ph.D. Electronic and Electrical Engineering, University of Sheffield

        Research Interests
        Growth of c-plane III-nitride based materials and LED-structure by MOCVD
        Growth of non-polar and semi-polar III-nitride based materials by MOCVD
        Study of optical properties of AlGaN

        Recent Publications
        Y. P. Gong, K. Xing, and T. Wang, Appl. Phys. Lett, 99, 171912 (2011)
        K. Xing, Y. P. Gong, J. Bai, and T. Wang, Appl. Phys. Lett, 99, 181907 (2011)
        Q. Wang, J. Bai, Y. P. Gong and T. Wang, J. Phys. D: Appl. Phys., 44, 395102 (2011)
        Y. P. Gong, K. Xing, and T. Wang, Phys. Status Solidi, 8, 2056 (2011)
        Q. Wang, Y. P. Gong, J. F. Zhang, J. Bai, F. Ranalli, and T. Wang, Appl. Phys. Lett., 95, 161904 (2009)

            Dr Duc Dinh

            Research Associate

            B.Eng, Electronics and Telecommunications Engineering, Hanoi University of Technology, Vietnam
            MSc, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, South Korea
            PhD, Institute of Solid State Physics, Technical University of Berlin, Germany

            Research Interests:
            Growth of III-Nitride semiconductors and LED structures using MOCVD Optical characterization of nitride materials

                Dr Modestos Athanasiou

                Research Associate

                B.Eng, Electronic and Electrical Engineering, University of Sheffield.

                Research Interests
                Fabrication and characterisation of nanostructure devices using nano-sphere lithography technique, for high-efficiency LEDs and LD devices.

                Recent Publications
                M.Athanasiou,T.K.Kim,B.Liu,R.Smith and T.Wang, ’Fabrication of two-dimensional InGaN/GaN photonic crystal structure using a modified nanosphere lithography technique’, Appl. Phys. Lett. 102, 191108 (2013).
                T. Kim, B. Liu, R. Smith, M. Athanasiou, Y. Gong and T. Wang,’ Coherent nanocavity structures for enhancement in internal quantum efficiency of III-nitride multiple quantum wells’, Appl. Phys. Lett. 104, 161108 (2014).
                J. Bai, C. C. Yang, M. Athanasiou and T. Wang , ‘Efficiency enhancement of InGaN/GaN solar cells with nanostructures’, Appl. Phys. Lett. 104, 051129 (2014).

                    Dr Jie Bai

                    Research Associate

                    Ph.D, University of Tokushima, Japan

                    Research Interests
                    Nanotechnology including fabrication of templates for semi-/non-polar GaN overgrowth;
                    III-nitride-based high-brightness nanorod array LEDs, UV-LEDs, solar cells with photonic nanostructures and Laser Diodes on sapphire substrates;
                    High-resolution transmission electron microscopy and energy x-ray microanalysis study of nitride-related semiconductor materials;
                    Structural and optical investigation of InGaN/GaN and GaN/AlGaN multiple quantum well structures.

                    Recent Publications
                    She has published more than 60 journal papers and 1 invited review paper. Her publications have received over 800 citations and ranked with a high-index of 18 (ISI web of Knowledge).

                        Dr Yaonan Hou

                        Research Associate

                        Ph.D, Institute of Physics, Chinese Academy of Sciences

                        Research Interests
                        Low dimensional surface plasmon light sources based on III-nitride semiconductors
                        Fabrication and characterization of III-nitride nanostructures
                        Optoelectronic devices based on III-nitride semiconductors, specifically LDs and LEDs
                        Growth of III-nitride materials on Si substrate

                        Recent Publications
                        Y. Hou, P. Renwick, B. Liu, J. Bai, and T. Wang, “Room temperature plasmonic lasing in a continuous wave operation mode from an InGaN/GaN single nanorod with a low threshold”. Scientific Reports 4, 5014. (2014).

                          PhD students

                            Benbo Xu

                            PhD Student

                            Bachelor of Science, Guangdong University of Technology, China
                            MSc in Semiconductor Photonics and Electronics, University of Sheffield

                            Research Interests
                            Growth of III-nitride materials on Si substrate by MOCVD
                            strain and mobility study of semi-polar overgrown GaN
                            Growth of high quality semi-polar GaN

                                Fernando Guzmann

                                PhD Student

                                Bachelor of Electronic and Communications Engineering at Tecnológico de Monterrey, CCM
                                MsC Advanced Technology at IPN

                                Research Interests
                                Optoelectronic device fabrication
                                III-nitride LEDs
                                Photonic crystals

                                    Yun Zhang

                                    PhD Student

                                    B.Sc, M.Sc. Nanjing University

                                    Research Interests
                                    Optical properties of non-polar and semipolar III-nitride quantum structures.

                                        Suneal Ghataora

                                        PhD Student

                                        B.Eng. Electronic and Electrical Engineering, The University of Sheffield

                                        Research Interests
                                        Fabrication and characterisation of hybrid organic and inorganic III-Nitride semiconductor light emitting opto-electronic devices.

                                            Xiang Yu

                                            PhD Student

                                            B.Eng, Electronic and Electrical Engineering, University of Sheffield

                                            Research Interests
                                            Growth of semi-polar III-nitride materials by MOCVD

                                                Kun Xing

                                                PhD Student

                                                B.Eng, Electronic and Electrical Engineering, University of Sheffield

                                                Research Interests
                                                Growth of c-plane, non-polar and semi-polar III-nitride based materials by MOCVD
                                                Overgrowth of a-plane GaN on non-polar nanorod templates by MOCVD
                                                Optical properties of a-plane InGaN/GaN quantum well structures grown on the overgrown a-plane GaN, including the study of its relevant LED device structure and stimulated emission

                                                Recent Publications
                                                K. Xing, Y. P. Gong, J. Bai, and T. Wang, Appl. Phys. Lett, 99, 181907 (2011)
                                                Y. P. Gong, K. Xing, and T. Wang, Appl. Phys. Lett, 99, 171912 (2011)
                                                Y. P. Gong, K. Xing, and T. Wang, Ph

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