Book Chapters

  • T Wang : Chapter 3: “Nitride emitters-recent progress”, Wide Bandgap Light Emitting Materials and Devices, Editor: Profs Neumark, Kuskovsky and Jiang, page 109-144, (2007) Publisher: Wiley-VCH Verlag, Germany
  • T Wang : Chapter 9: “Optical investigation of InGaN related quantum well structures” GaN-based Materials: Epitaxy and Characterization, Editor: Prof Zhe Chuan FENG, page 305-343, (2006) Publisher: Imperial College Press (ICP), UK
  • S Sakai, T Wang, H X Wang and J Bai : The Chapter: “MOCVD growth of wide-bandgap nitride semiconductors”, Gallium Nitride based Technology, Critical Reviews Series, Editor: Prof. M Osinski, Publisher: SPIE OPTICAL ENGINEERING PRESS, Washington, USA (2002). Proceeding of SPIE, Critical Review Vol.83, 47-76 (2002)

Selected Publications in Scientific Reports, Nano Letters, Applied Physics Letters and Physical Review B

  • “Room temperature plasmonic lasing from a single nanorod with low threshold” Y Hou, P Renwick, B Liu, J Bai and T Wang Scientific Reports, in press (2014)
  • “Coherent nanocavity effect in InGaN/GaN nanodisk arrays” T Kim, B Liu, R Smith, M Athanasiou Y P Gong and T Wang Appl. Phys. Lett. 104, 161108 (2014)
  • “Enhanced efficiency of InGaN/GaN solar cells with nanostructures” J Bai, M Athanasiou, T K Kim and T Wang Appl. Phys. Lett. 104, 051129 (2014)
  • “Significantly enhanced performance of an InGaN/GaN nanostructure based photo-electrode for solar power hydrogen generation” J Benton, J Bai and T Wang Appl. Phys. Lett. 103, 133904 (2013)
  • “Great emission enhancement and excitonic recombination dynamics of InGaN/GaN nanorod structures” B Liu, R Smith, J Bai, Y P Gong and T Wang Appl. Phys. Lett. 103, 101108 (2013)
  • “Hybrid III-nitride/organic semiconductor nanostructure with high efficiency non-radiative energy transfer for white light emitter” R Smith, B Liu, J Bai and T Wang Nano Lett. 13, 3042 (2013)
  • “Simplifying an approach to the fabrication of two-dimensional InGaN/GaN photonic crystal structure” M Athanasiou, T K Kim, B Liu, R Smith and T Wang Appl. Phys. Lett. 102, 191108 (2013)
  • “Enhancement in Hydrogen Generation Efficiency Using A GaN-based Nanorod Structure” J Benton, J Bai and T Wang Appl. Phys. Lett. 120, 173905 (2013)
  • “Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on a nanorod template” J Bai, Y P Gong , K Xing, X Yu, and T Wang Appl. Phys. Lett. 102, 101906 (2013)
  • “longitudinal optical phonon-exciton interaction in InGaN/GaN nanorod structures” P Renwick, H Tang, J Bai, and T Wang Appl. Phys. Lett. 100, 182105 (2012)
  • “InGaN/GaN quantum well structures with greatly enhanced performance on a-plane GaN grown using self-organised nano-masks” K Xing, Y Gong, J Bai and T Wang Appl. Phys. Lett. 99, 181907 (2011)
  • “Optical gain in AlGaN/AlGaN multiple quantum well grown on high temperature AlN multiple buffers” Y P Gong, K Xing and T Wang Appl. Phys. Lett. 99, 171912 (2011)
  • “High resolution cathodoluminescence hyperspectral imaging of InGaN/GaN multiple quantum wells” J Bruckbauer, P R. Edwards, T Wang and R W. Martin Appl. Phys. Lett. 98, 141908 (2011)
  • “Optically-pumped ultraviolet lasing from nitride nanopillars at room temperature” R Chen, H D Sun, T Wang, K N Hui and H W Choi Appl. Phys. Lett. 96, 241101 (2010)
  • “Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures” S C Davies, D J Mowbray, F Ranalli and T Wang Appl. Phys. Lett. 96, 251904 (2010)
  • “340 nm Stimulated emission of AlGaN based MQW grown using high temperature AlN buffer technologies on sapphire” Q Wang, Y P Gong, J F Zhang, J Bai, F Ranalli and T Wang Appl. Phys. Lett. 95, 161904 (2009)
  • “Influence of the crystalline quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots” S C Davies, D J Mowbray, Q Wang, F Ranalli and T Wang Appl. Phys. Lett. 95, 101909 (2009)
  • “Optical and microstructural studies of InGaN/GaN quantum dot ensembles” S C Davies, D J Mowbray, F Ranalli, P J Parbrook, Q Wang, T Wang, B S Yea, B J Sherliker, M P Halsall, R J Kashtiban and U Bangert Appl. Phys. Lett. 95, 111903(2009)
  • “Influence of Annealing Temperature on Optical Properties of InGaN Quantum Dot Based Light Emitting Diodes” Q Wang, T Wang, J Bai, A G Cullis, P J Parbrook and F Ranalli Appl. Phys. Lett. 93, 081915 (2008)
  • “Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer” J Bai, T Wang, P J Parbrook, Q Wang, K B Lee, and A G Cullis Appl. Phys. Lett. 91, 131903 (2007)
  • “Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy” P D C King, T D Veal, P H Jefferson, C F McConville, T Wang, P J Parbrook, H Lu and W J Schaff Appl. Phys. Lett. 90, 132105 (2007)
  • “Optically-detected magnetic resonance of spin-paired complexes emitting in the 2.3 eV spectral region in magnesium-doped GaN” G N Aliev, S Zeng, S J Bingham, D Wolverson and J J Davies, T Wang and P J Parbrook Phys. Rev. B 74, 235205 (2006)
  • “The dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness” J H Na, R A Taylor, K H Lee, A M Fox, T Wang, P Parbrook, S N. Yi, J W Choi and J S Lee Appl. Phys. Lett. 89, 253120 (2006)
  • “Greatly improved performance of 340 nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer” T Wang, K B Lee, J Bai, P J Parbrook, R J Airey, Q Wang, G Hill, F Ranalli and A G Cullis Appl. Phys. Lett. 89, 081126 (2006)
  • “Mechanisms of dislocation reduction in an Al0.98Ga0.02N layer grown using an island-like AlN buffer” J Bai, T Wang, P J Parbrook and A G Cullis Appl. Phys. Lett. 89, 131925 (2006)
  • “The origin of the red luminescence in Mg-doped GaN” S Zeng, G Aliev, D Wolverson, J Davies, S Bingham, D Abdulmalik, P Coleman, T Wang and P Parbrook Appl. Phys. Lett. 89, 022107 (2006)
  • “Resolution of discrete excited states in InxGa1-xN multiple quantum wells using degenerate four-wave mixing” D O Kundys, J-P R Wells, A D Andreev, S A Hashemizadeh, T Wang, P J Parbrook, A M Fox, D J Mowbray and M S Skolnick Phys. Rev. B 73, 165309 (2006)
  • “Effects of depletion on the emission from individual InGaN dots” B Sherlikera and M P Halsall, P D Buckle, P J Parbrook and T Wang Appl. Phys. Lett. 88, 122115 (2006)
  • “Picosecond Carrier Dynamics in AlInGaN Multiple Quantum Wells” A Hashemizadeh, J-P R Wells, P Murzyn, J Brown, B D Jones, T Wang, P J Parbrook, A M Fox, D J Mowbray and M S Skolnick Appl. Phys. Lett. 87, 232106 (2005)
  • “Air-bridged lateral growth of an Al0.98Ga0.02N layer by introduction of porosity in an AlN buffer” T Wang, J Bai, P J Parbrook and A G Cullis Appl. Phys. Lett. 87, 151906 (2005)
  • “Fabrication and optical investigation of a high density GaN nanowire array” T Wang, F Ranalli, P J Parbrook, R Airey, J Bai R Rattlidge and G Hill Appl. Phys. Lett. 86, 103103 (2005)
  • “Nature of acceptor states in magnesium-doped gallium nitride” G N Aliev, S Zeng, J J Davies, D Wolverson, S J Bingham, P J Parbrook and T Wang Phys. Rev. B 71, 195204(2005)
  • “High-reflectivity AlxGaN1-xN/AlyGa1-yN distributed Bragg reflectors with a peak wavelength around 350 nm” T Wang, R J Lynch and P J Parbrook, R Butte, A Alyamani, D Sanvitto and M S Skolnick Appl. Phys. Lett. 85, 43 (2004)
  • “Optical Investigation of InGaN/GaN multiple-quantum wells under high excitation” T Wang, P J Parbrook, W H Fan and A M Fox Appl. Phys. Lett. 84, 5159 (2004)
  • “Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells” W H Fan, S M Olaizola, J P R. Wells, A M Fox, T Wang, P J Parbrook, D J Mowbray and M S Skolnick Appl. Phys. Lett. 84, 3052 (2004)
  • “Electron-beam-induced segregation in InGaN’GaN multiple-quantum wells” J P O’Neill, I M Ross, A G Cullis, T Wang and P J Parbrook Appl. Phys. Lett. 83, 1965 (2003)
  • “1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348nm grown on sapphire substrate” T Wang, Y H Liu, Y B Lee, J P Ao, J Bai and S Sakai Appl. Phys. Lett. 81 2508 (2002)
  • “Modulation-doping influence on the photoluminescence from the two-dimensional electron gas of AlGaN/GaN heterostructures” T Wang, J Bai and S Sakai Phys. Rev. B 63, 205320 (2001)
  • “Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes” T Wang, J Bai, S Sakai and J K Ho Appl. Phys. Lett. 78, 2671 (2001)
  • “Investigation of phonon emission processes in an AlGaN/GaN heterostructure at low temperatures” K J Lee and J J Harris, J Kent, T Wang, S Sakai, D K Maude and J-C Portal Appl. Phys. Lett. 78, 2893 (2001)
  • “Magneto-transport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time” T Wang, J Bai, S Sakai Y Ohno and H Ohno Appl. Phys. Lett. 76, 2737 (2000)
  • “The influence of buffer layer and growth temperature on the quality of undoped GaN layer grown on sapphire substrate by MOCVD” T Wang, D Nakagawa, H B Sun, H X Wang, J Bai, S Sakai and H Misawa Appl. Phys. Lett. 76, 2220 (2000)
  • “Effect of silicon-doping on the optical and transport properties of InGaN/GaN multiple quantum well structures” T Wang, H Saeki, J Bai, M Lachab, T Shirahama, and S Sakai Appl. Phys. Lett 76, 1737 (2000)
  • “Magneto-optical Study of Excitonic states in In0.045Ga0.955As/GaAs coupled quantum wells” T Wang, M Bayer, A Forchel, N A Gippius and V D Kulakovskii Phys. Rev. B 62, 7433 (2000)
  • “The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diodes” T Wang, T Sugahara, S Sakai and J Orton Appl. Phys. Lett. 74, 1376 (1999)
  • “Electron mobility exceeding 10^4cm^2/V.s in an AlGaN-GaN heterostructure grown on a sapphire substrate” T Wang, Y Ohno, M Lachab, D Nakagawa, T Shirahama, S Sakai and H Ohno Appl. Phys. Lett. 74, 3531 (1999)
  • “Optical investigation of InGaN/GaN multiple quantum wells” T Wang, D Nakagawa, M Lachab, T Sugahara and S Sakai Appl. Phys. Lett. 74, 3128 (1999)
  • “MOCVD selective growth and characterization of InGaN quantum dots” J Wang, M Nozaki, M Lachab, Y Ishikawa, R S Q Fareed, T Wang, M Hao and S Sakai Appl. Phys. Lett, 75, 950 (1999)
  • “The effect of the hole sub-band mixing on the spin splitting of heavy-hole excitons in coupled In0.045Ga0.955As/GaAs double quantum wells” T Wang, M Bayer and A Forchel Phys. Rev. B 58, R10183 (1998) (Rapid Communication)
  • “Transition from direct to indirect band structure induced by the AlSb layer in GaSb/AlSb quantum well” T Wang, F Kieseling and A Forchel Phys. Rev. B 58, 3594 (1998)
  • “Growth and Optical investigation of strain-induced AlGaAs/GaAs quantum dots using self-organized GaSb islands as a stressor” T Wang and A Forchel Appl. Phys. Lett. 73, 1847 (1998)
  • “Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells” T Wang, D Nakagawa, J Wang, T Sugahara and S Sakai Appl. Phys. Lett. 73, 3571 (1998)